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DTSTART;TZID=America/New_York:20221102T124500
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DTSTAMP:20240121T174258Z
CREATED:20230817T174336Z
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SUMMARY:Doping and inverting Mott insulators on semiconductor moire superlattices
DESCRIPTION:Speaker: Liang Fu (MIT) \n\n\nTitle: Doping and inverting Mott insulators on semiconductor moire superlattices \nAbstract: Semiconductor bilayer heterostructures provide a remarkable platform for simulating Hubbard models on an emergent lattice defined by moire potential minima. As a hallmark of Hubbard model physics\, the Mott insulator state with local magnetic moments has been observed at half filling of moire band. In this talk\, I will describe new phases of matter that grow out of the canonical 120-degree antiferromagnetic Mott insulator on the triangular lattice. First\, in an intermediate range of magnetic fields\, doping this Mott insulator gives rise to a dilute gas of spin polarons\, which form a pseudogap metal. Second\, the application of an electric field between the two layers can invert the many-body gap of a charge-transfer Mott insulator\, resulting in a continuous phase transition to a quantum anomalous Hall insulator with a chiral spin structure. Experimental results will be discussed and compared with theoretical predictions.
URL:https://cmsa.fas.harvard.edu/event/collquium-11222/
LOCATION:CMSA Room G10\, CMSA\, 20 Garden Street\, Cambridge\, MA\, 02138\, United States
CATEGORIES:Colloquium
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