Doping and inverting Mott insulators on semiconductor moire superlattices
CMSA Room G10 CMSA, 20 Garden Street, Cambridge, MA, United Stateshttps://youtu.be/-NisBM-2a2I Speaker: Liang Fu (MIT) Title: Doping and inverting Mott insulators on semiconductor moire superlattices Abstract: Semiconductor bilayer heterostructures provide a remarkable platform for simulating Hubbard models on an emergent lattice defined by moire potential minima. As a hallmark of Hubbard model physics, the Mott insulator state with local magnetic moments has been observed at […]